Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor

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dc.date.accessioned2008-03-03T20:47:33Z
dc.date.available2008-03-03T20:47:33Z
dc.date.issued2002
dc.format.extent521901 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationFan, Y. Y., Nieh, R. E., Lee, J. C., Lucovsky, G., Brown, G. A., Register, L. F., & Banerjee, S. K. (2002). Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor. IEEE transactions on electron devices, 49(11), 1969-1978.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/415
dc.language.isoen
dc.titleVoltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor
dc.typeArticle

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