Spectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides.

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dc.contributor.advisorGerald Lucovsky, Chairen_US
dc.contributor.advisorDavid Aspnes, Memberen_US
dc.contributor.advisorJerry Whitten, Memberen_US
dc.contributor.advisorDaniel Dougherty, Memberen_US
dc.contributor.authorCheng, Chengen_US
dc.date.accepted2016-04-20en_US
dc.date.accessioned2016-04-23T12:31:41Z
dc.date.available2016-04-23T12:31:41Z
dc.date.defense2016-01-27en_US
dc.date.issued2016-01-27en_US
dc.date.released2016-04-23en_US
dc.date.reviewed2016-03-24en_US
dc.date.submitted2016-03-16en_US
dc.degree.disciplinePhysicsen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg4992en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/11105
dc.rightsen_US
dc.titleSpectroscopic Studies of Semiconductor Materials for Aggressive-scaled Micro- and Opto-electronic Devices: nc-SiO2, GeO2; ng-Si, Ge and ng-Transition metal (TM) oxides.en_US

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