Investigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4H-SiC and their Effect on the SiC/SiO2 Interface.

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dc.contributor.advisorJustin Schwartz, Chairen_US
dc.contributor.advisorVeena Misra, Minoren_US
dc.contributor.advisorDan Lichtenwalner, Memberen_US
dc.contributor.advisorAlan Batchelor, Memberen_US
dc.contributor.advisorAnant Agarwal, Externalen_US
dc.contributor.authorHaney, Sarah Kayen_US
dc.date.accepted2012-11-30en_US
dc.date.accessioned2012-12-02T06:32:15Z
dc.date.available2012-12-02T06:32:15Z
dc.date.defense2012-10-18en_US
dc.date.issued2012-10-18en_US
dc.date.released2012-12-02en_US
dc.date.reviewed2012-10-24en_US
dc.date.submitted2012-10-23en_US
dc.degree.disciplineMaterials Science and Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg2118en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/8264
dc.titleInvestigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4H-SiC and their Effect on the SiC/SiO2 Interface.en_US

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