Gallium nitride semiconductor structures including lateral gallium nitride layers

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dc.date.accessioned2008-07-23T15:39:20Z
dc.date.available2008-07-23T15:39:20Z
dc.date.issued2003
dc.format.extent79414 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationDavis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Gallium nitride semiconductor structures including lateral gallium nitride layers. U.S. Patent No. 6,570,192. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/936
dc.language.isoen
dc.titleGallium nitride semiconductor structures including lateral gallium nitride layers
dc.typePatent

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