Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

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dc.date.accessioned2008-02-22T23:14:48Z
dc.date.available2008-02-22T23:14:48Z
dc.date.issued1998
dc.format.extent149869 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationLucovsky, G., Yang, H., & Massoud, H. Z. (1998). Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 16(4), 2191-2198.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/251
dc.language.isoen
dc.titleHeterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces
dc.typeArticle

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