1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process
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2000
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Wu, Y. D., Lee, Y. M., & Lucovsky, G. (2000). 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process. IEEE electron device letters, 21(3), 116-118.
