Method of forming epitaxial silicon-comprising material

Simple item page
dc.date.accessioned2008-10-17T18:41:59Z
dc.date.available2008-10-17T18:41:59Z
dc.date.issued2006
dc.format.extent137331 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationRamaswamy, N., Sandhu, G. S., Basceri, C., & Blomiley, E. R. (2006). Method of forming epitaxial silicon-comprising material. U.S. Patent No. 7,144,779. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1759
dc.language.isoen
dc.titleMethod of forming epitaxial silicon-comprising material
dc.typePatent

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
US_7144779_B2_I.pdf
Size:
134.11 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.76 KB
Format:
Plain Text
Description:
Download

Collections

Publications