Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997)

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dc.date.accessioned2008-02-23T17:04:39Z
dc.date.available2008-02-23T17:04:39Z
dc.date.issued1998
dc.format.extent34186 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationWolfe, D. M., Wang, F., Habermehl, S., Lucovsky, G. (1998). Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997) Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 16(1), 207.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/282
dc.language.isoen
dc.titleLow-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997)
dc.typeArticle

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