Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

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dc.date.accessioned2008-02-23T16:50:01Z
dc.date.available2008-02-23T16:50:01Z
dc.date.issued1999
dc.format.extent68870 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationLucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. (1999). Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics. Applied physics letters, 74(14), 2005-2007.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/275
dc.language.isoen
dc.titleBonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics
dc.typeArticle

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