Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon

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dc.date.accessioned2008-07-28T16:00:09Z
dc.date.available2008-07-28T16:00:09Z
dc.date.issued1990
dc.format.extent114693 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationKong, H. S., Glass, J. T., & Davis, R. F. (1990). Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon. U.S. Patent No. 4,912,064. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1156
dc.language.isoen
dc.titleHomoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
dc.typePatent

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