4H-SiC Trench-Gate MOSFET: Practical Surface-Channel Mobility Extraction.

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dc.contributor.advisorB. Baliga, Chair
dc.contributor.advisorStephen Michielsen, Graduate School Representative
dc.contributor.advisorJohn Muth, Member
dc.contributor.advisorJohn Veliadis, Member
dc.contributor.advisorVeena Misra, Member
dc.contributor.authorHarmon, Jeffrey Lee
dc.date.accepted2019-10-09
dc.date.accessioned2019-10-22T12:30:56Z
dc.date.available2019-10-22T12:30:56Z
dc.date.defense2019-08-23
dc.date.issued2019-08-23
dc.date.released2019-10-22
dc.date.reviewed2019-10-04
dc.date.submitted2019-10-04
dc.degree.disciplineElectrical Engineering
dc.degree.leveldissertation
dc.degree.nameDoctor of Philosophy
dc.identifier.otherdeg18824
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.20/36992
dc.rights
dc.title4H-SiC Trench-Gate MOSFET: Practical Surface-Channel Mobility Extraction.

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