Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well

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dc.date.accessioned2008-07-21T20:00:53Z
dc.date.available2008-07-21T20:00:53Z
dc.date.issued2000
dc.format.extent85293 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationSchetzina, J. F. (2000). Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well. U.S. Patent No. 6,046,464. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/839
dc.language.isoen
dc.titleIntegrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well
dc.typePatent

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