Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Simple item page
dc.date.accessioned2008-07-23T15:30:51Z
dc.date.available2008-07-23T15:30:51Z
dc.date.issued2003
dc.format.extent79029 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationLinthicum, K. J., Gehrke, T., & Davis, R. F. (2003). Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts. U.S. Patent No. 6,586,778. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/926
dc.language.isoen
dc.titleGallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts
dc.typePatent

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
US_6586778_B2_I.pdf
Size:
77.18 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.76 KB
Format:
Plain Text
Description:
Download

Collections

Publications