Vertical junction field effect transistor having an epitaxial gate

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dc.date.accessioned2008-10-17T21:09:30Z
dc.date.available2008-10-17T21:09:30Z
dc.date.issued2008
dc.format.extent118032 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationHarris, C., Konstantinov, A., & Basceri, C. (2008). Vertical junction field effect transistor having an epitaxial gate. U.S. Patent No. 7,355,223. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1829
dc.language.isoen
dc.titleVertical junction field effect transistor having an epitaxial gate
dc.typePatent

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