Semiconductor to Metal Transition Characteristics of Vo2/NiO Epitaxial Heterostructures Integrated with Si(100).

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dc.contributor.advisorJagdish Narayan, Chairen_US
dc.contributor.advisorRoger Narayan, Memberen_US
dc.contributor.advisorJames Rigsbee, Memberen_US
dc.contributor.advisorJohn Prater, Memberen_US
dc.contributor.authorMolaei, Royaen_US
dc.date.accepted2014-07-18en_US
dc.date.accessioned2014-07-19T09:30:19Z
dc.date.available2014-07-19T09:30:19Z
dc.date.defense2014-03-19en_US
dc.date.issued2014-03-19en_US
dc.date.released2014-07-19en_US
dc.date.reviewed2014-04-10en_US
dc.date.submitted2014-04-07en_US
dc.degree.disciplineMaterial Science & Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg3398en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/9595
dc.rightsen_US
dc.titleSemiconductor to Metal Transition Characteristics of Vo2/NiO Epitaxial Heterostructures Integrated with Si(100).en_US

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