Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance

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dc.date.accessioned2008-07-21T18:59:21Z
dc.date.available2008-07-21T18:59:21Z
dc.date.issued1997
dc.format.extent101823 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J. (1997). Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance. U.S. Patent No. 5,637,898. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/804
dc.language.isoen
dc.titleVertical field effect transistors having improved breakdown voltage capability and low on-state resistance
dc.typePatent

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