Method of forming semi-insulating silicon carbide single crystal

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dc.date.accessioned2008-10-17T19:35:43Z
dc.date.available2008-10-17T19:35:43Z
dc.date.issued2007
dc.format.extent116793 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBasceri, C., Yushin, N., & Balkas, C. M. (2007). Method of forming semi-insulating silicon carbide single crystal. U.S. Patent No. 7,276,117. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1796
dc.language.isoen
dc.titleMethod of forming semi-insulating silicon carbide single crystal
dc.typePatent

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