Finite-Difference Time-Domain Simulations on Overgrown InGaN/GaN Multiple Quantum Well (MQW) Light Emitting Diode (LED).

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dc.contributor.advisorLeda Lunardi, Chairen_US
dc.contributor.advisorSalah M. Bedair, Memberen_US
dc.contributor.advisorRobert Kolbas, Memberen_US
dc.contributor.authorHonnalli, Narendra Veerannaen_US
dc.date.accepted2015-04-20en_US
dc.date.accessioned2015-04-21T09:30:13Z
dc.date.available2015-04-21T09:30:13Z
dc.date.defense2015-03-19en_US
dc.date.issued2015-03-19en_US
dc.date.released2015-04-21en_US
dc.date.reviewed2015-04-04en_US
dc.date.submitted2015-03-23en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.levelthesisen_US
dc.degree.nameMaster of Scienceen_US
dc.identifier.otherdeg4196en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/10188
dc.rightsen_US
dc.titleFinite-Difference Time-Domain Simulations on Overgrown InGaN/GaN Multiple Quantum Well (MQW) Light Emitting Diode (LED).en_US

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