Vertical field effect transistors including conformal monocrystalline silicon layer on trench sidewall

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US_6828580_B2_I.pdf (80.93 KB)

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2004

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Zhang, Z. (2004). Vertical field effect transistors including conformal monocrystalline silicon layer on trench sidewall. U.S. Patent No. 6,828,580. Washington, DC: U.S. Patent and Trademark Office.

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http://www.lib.ncsu.edu/resolver/1840.2/986

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