Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes

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US_6653653_B2_I.pdf (154.85 KB)

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2003

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Brousseau, L. C. (2003). Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes. U.S. Patent No. 6,653,653. Washington, DC: U.S. Patent and Trademark Office.

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http://www.lib.ncsu.edu/resolver/1840.2/1685

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