Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface
No Thumbnail Available
Date
2004
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Lucovsky, G., & Phillips, J. C. (2004). Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 22(4), 2087-2096.
