Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics
| dc.date.accessioned | 2008-03-03T20:48:51Z | |
| dc.date.available | 2008-03-03T20:48:51Z | |
| dc.date.issued | 2001 | |
| dc.format.extent | 196968 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Massengill, L. W., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., Meisenheimer, T. L., Dodd, P. E., Schwank, J. R., Lee, Y. M., Johnson, R. S., & Lucovsky, G. (2001). Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics. IEEE transactions on nuclear science, 48(6), 1904-1912. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/416 | |
| dc.language.iso | en | |
| dc.title | Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics | |
| dc.type | Article |
