InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Grown on Polar, Semi-polar and Non-Polar Orientations.

dc.contributor.advisorSalah M. Bedair, Chairen_US
dc.contributor.advisorNadia El-Masry, Memberen_US
dc.contributor.advisorMehmet Ozturk, Memberen_US
dc.contributor.advisorLeda Lunardi, Memberen_US
dc.contributor.authorHosalli Mukund, Aadhithyaen_US
dc.date.accepted2014-07-14en_US
dc.date.accessioned2014-07-25T09:30:16Z
dc.date.available2014-07-25T09:30:16Z
dc.date.defense2014-05-09en_US
dc.date.issued2014-05-09en_US
dc.date.released2014-07-25en_US
dc.date.reviewed2014-05-19en_US
dc.date.submitted2014-05-09en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg3504en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/9657
dc.rightsen_US
dc.titleInGaN/GaN Multiple Quantum Well Light-Emitting Diodes Grown on Polar, Semi-polar and Non-Polar Orientations.en_US

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
etd.pdf
Size:
5.56 MB
Format:
Adobe Portable Document Format

Collections