Method of fabricating epitaxially deposited ohmic contacts using group II-V I

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dc.date.accessioned2008-10-27T15:13:07Z
dc.date.available2008-10-27T15:13:07Z
dc.date.issued1994
dc.format.extent683570 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationSchetzina, J. F. (1994). Method of fabricating epitaxially deposited ohmic contacts using group II-V I. U.S. Patent No. 5366927. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1923
dc.language.isoen
dc.titleMethod of fabricating epitaxially deposited ohmic contacts using group II-V I
dc.typePatent

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