Design, Fabrication and Characterization of High Voltage (>10 kV) 4H-SiC MPS Diodes.

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dc.contributor.advisorB. Baliga, Chair
dc.contributor.advisorJohn Veliadis, Member
dc.contributor.advisorRamon Collazo, Graduate School Representative
dc.contributor.advisorSubhashish Bhattacharya, Member
dc.contributor.advisorDouglas Hopkins, Member
dc.contributor.authorJiang, Yifan
dc.date.accepted2019-04-11
dc.date.accessioned2019-04-12T12:30:41Z
dc.date.available2019-04-12T12:30:41Z
dc.date.defense2018-12-07
dc.date.issued2018-12-07
dc.date.released2019-04-12
dc.date.reviewed2018-12-14
dc.date.submitted2018-12-13
dc.degree.disciplineElectrical Engineering
dc.degree.leveldissertation
dc.degree.nameDoctor of Philosophy
dc.identifier.otherdeg12524
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.20/36460
dc.rights
dc.titleDesign, Fabrication and Characterization of High Voltage (>10 kV) 4H-SiC MPS Diodes.

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