Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon

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dc.date.accessioned2008-02-23T16:51:35Z
dc.date.available2008-02-23T16:51:35Z
dc.date.issued1998
dc.format.extent80282 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationSchafer, J., Young, A. P., Brillson, L. J., Niimi, H., & Lucovsky, G. (1998). Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon. Applied physics letters, 73(6), 791-793.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/276
dc.language.isoen
dc.titleDepth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon
dc.typeArticle

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