Light-emitting Diodes Based on Epitaxy on Non-polar Sidewalls and III-Nitrides Nanowires.

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dc.contributor.advisorNadia El-Masry, Chairen_US
dc.contributor.advisorSalah M. Bedair, Co-Chairen_US
dc.contributor.advisorJames Rigsbee, Memberen_US
dc.contributor.advisorJagannadham Kasichainula, Memberen_US
dc.contributor.authorFrajtag, Pavelen_US
dc.date.accepted2011-08-01en_US
dc.date.accessioned2011-08-03T07:00:38Z
dc.date.available2011-08-03T07:00:38Z
dc.date.defense2011-07-22en_US
dc.date.issued2011-07-22en_US
dc.date.released2011-08-03en_US
dc.date.reviewed2011-07-25en_US
dc.date.submitted2011-07-22en_US
dc.degree.disciplineMaterials Science and Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg1004en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/7112
dc.titleLight-emitting Diodes Based on Epitaxy on Non-polar Sidewalls and III-Nitrides Nanowires.en_US

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