Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers

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dc.date.accessioned2008-10-14T15:52:46Z
dc.date.available2008-10-14T15:52:46Z
dc.date.issued2003
dc.format.extent111618 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBasceri, C., Vasilyeva, I., Derraa, A., Campbell, P. H., & Sandhu, G. S. (2003). Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers. U.S. Patent No. 6,586,285. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1396
dc.language.isoen
dc.titlePlasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers
dc.typePatent

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