Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
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2000
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Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2000). Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer. U.S. Patent No. 6,051,849. Washington, DC: U.S. Patent and Trademark Office.
