Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Simple item page
dc.date.accessioned2008-07-21T19:37:54Z
dc.date.available2008-07-21T19:37:54Z
dc.date.issued2000
dc.format.extent76157 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationDavis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2000). Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer. U.S. Patent No. 6,051,849. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/822
dc.language.isoen
dc.titleGallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
dc.typePatent

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
US_6051849_A_I.pdf
Size:
74.37 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.76 KB
Format:
Plain Text
Description:
Download

Collections

Publications