Method of forming platinum ohmic contact to p-type silicon carbide

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dc.date.accessioned2008-07-28T15:54:56Z
dc.date.available2008-07-28T15:54:56Z
dc.date.issued1995
dc.format.extent97716 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationGlass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S. (1995). Method of forming platinum ohmic contact to p-type silicon carbide. U.S. Patent No. 5,409,859. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1151
dc.language.isoen
dc.titleMethod of forming platinum ohmic contact to p-type silicon carbide
dc.typePatent

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