Enhancing Performance of SiC Planar-gate Power MOSFETs with 650 V, 1.2 kV, and 2.3 kV Blocking Voltages with Structural Modifications.

Simple item page
dc.contributor.advisorB. Baliga, Chair
dc.contributor.advisorJohn Veliadis, Member
dc.contributor.advisorSubhashish Bhattacharya, Member
dc.contributor.advisorRamon Collazo, Graduate School Representative
dc.contributor.advisorVeena Misra, Member
dc.contributor.authorAgarwal, Aditi
dc.date.accepted2021-06-15
dc.date.accessioned2021-06-24T12:31:03Z
dc.date.available2021-06-24T12:31:03Z
dc.date.defense2021-06-01
dc.date.issued2021-06-01
dc.date.released2021-06-24
dc.date.reviewed2021-06-09
dc.date.submitted2021-06-07
dc.degree.disciplineElectrical Engineering
dc.degree.leveldissertation
dc.degree.nameDoctor of Philosophy
dc.identifier.otherdeg25897
dc.identifier.urihttps://www.lib.ncsu.edu/resolver/1840.20/38881
dc.titleEnhancing Performance of SiC Planar-gate Power MOSFETs with 650 V, 1.2 kV, and 2.3 kV Blocking Voltages with Structural Modifications.

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
etd.pdf
Size:
20.07 MB
Format:
Adobe Portable Document Format
Download

Collections

Dissertations