Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors
| dc.date.accessioned | 2008-03-03T20:25:40Z | |
| dc.date.available | 2008-03-03T20:25:40Z | |
| dc.date.issued | 2007 | |
| dc.format.extent | 381497 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Chen, D. K., Mamouni, E. E., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Galloway, K. F., Lee, S., Seo, H., Lucovsky, G., Jun, B., & Cressler, J. D. (2007). Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors. IEEE transactions on nuclear science, 54(6), 1931-1937. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/401 | |
| dc.language.iso | en | |
| dc.title | Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors | |
| dc.type | Article |
