Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film
No Thumbnail Available
Date
2006
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Cross, J. S., Tsukada, M., Horii, Y., Gruverman, A., & Kingon, A. (2006). Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film. U.S. Patent No. 7,075,135. Washington, DC: U.S. Patent and Trademark Office.
