The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices
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2000
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Yang, H., Niimi, H., Keister, J. W., & Lucovsky, G. (2000). The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices. IEEE electron device letters, 21(2), 76-78.
