The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices

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dc.date.accessioned2008-03-03T20:53:55Z
dc.date.available2008-03-03T20:53:55Z
dc.date.issued2000
dc.format.extent63950 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationYang, H., Niimi, H., Keister, J. W., & Lucovsky, G. (2000). The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices. IEEE electron device letters, 21(2), 76-78.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/421
dc.language.isoen
dc.titleThe effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices
dc.typeArticle

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