Method for fabricating split gate transistor device having high-k dielectrics

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dc.date.accessioned2008-10-13T21:36:59Z
dc.date.available2008-10-13T21:36:59Z
dc.date.issued2005
dc.format.extent152229 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationRotondaro, A. L., Visokay, M. R., Chambers, J. J., & Colombo, L. (2005). Method for fabricating split gate transistor device having high-k dielectrics. U.S. Patent No. 6,979,623. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1327
dc.language.isoen
dc.titleMethod for fabricating split gate transistor device having high-k dielectrics
dc.typePatent

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