Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same
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2003
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Alok, D., & Jos, R. (2003). Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same. U.S. Patent No. 6,620,697. Washington, DC: U.S. Patent and Trademark Office.
