Selective deposition of doped silion-germanium alloy on semiconductor substrate

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dc.date.accessioned2008-07-28T20:32:20Z
dc.date.available2008-07-28T20:32:20Z
dc.date.issued1993
dc.format.extent105708 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationOzturk, M., Grider, D., Sanganeria, M., & Ashburn, S. (1993). Selective deposition of doped silion-germanium alloy on semiconductor substrate. U.S. Patent No. 5,242,847. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1231
dc.language.isoen
dc.titleSelective deposition of doped silion-germanium alloy on semiconductor substrate
dc.typePatent

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