Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.

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dc.contributor.advisorVeena Misra, Committee Chairen_US
dc.contributor.advisorMark Johnson, Committee Memberen_US
dc.contributor.advisorSalah M. Bedair, Committee Memberen_US
dc.contributor.advisorMehmet Ozturk, Committee Memberen_US
dc.contributor.advisorDan Lichtenwalner, Committee Memberen_US
dc.contributor.authorSuri, Rahulen_US
dc.date.accepted2010-10-11en_US
dc.date.accessioned2011-01-19T08:00:21Z
dc.date.available2011-01-19T08:00:21Z
dc.date.defense2010-08-06en_US
dc.date.issued2010-08-06en_US
dc.date.released2011-01-19en_US
dc.date.reviewed2010-08-12en_US
dc.date.submitted2010-08-11en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg249en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/6639
dc.rightsI hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to NC State University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.en_US
dc.titleInvestigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors.en_US

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