Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique

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dc.date.accessioned2008-10-14T18:12:13Z
dc.date.available2008-10-14T18:12:13Z
dc.date.issued1982
dc.format.extent160400 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationAdams, A. C., Aspnes, D. E., & Bagley, B. G. (1982). Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique. U.S. Patent No. 4,357,179. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1480
dc.language.isoen
dc.titleMethod for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
dc.typePatent

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