Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide

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dc.date.accessioned2008-07-28T16:01:57Z
dc.date.available2008-07-28T16:01:57Z
dc.date.issued1989
dc.format.extent102795 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationDavis, R. F., Carter, C. H., & Hunter, C. E. (1989). Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide. U.S. Patent No. 4,866,005. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1158
dc.language.isoen
dc.titleSublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
dc.typePatent

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