Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Simple item page
dc.date.accessioned2008-02-22T23:05:41Z
dc.date.available2008-02-22T23:05:41Z
dc.date.issued1999
dc.format.extent81295 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationMisra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., Wortman, J. J., & Hauser, J. R. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(4), 1836-1839.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/245
dc.language.isoen
dc.titleInterfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition
dc.typeArticle

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Lucovsky_1999_Journal_Vac_Sci_Tech_B_1836.pdf
Size:
79.39 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.77 KB
Format:
Plain Text
Description:
Download

Collections

Publications