Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor

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dc.date.accessioned2008-10-14T17:17:09Z
dc.date.available2008-10-14T17:17:09Z
dc.date.issued2002
dc.format.extent151359 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBasceri, C. (2002). Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor. U.S. Patent No. 6,335,049. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1435
dc.language.isoen
dc.titleChemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
dc.typePatent

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