The Mobility and Gate Oxide Reliability Improvement of SiC CMOS for High Temperature Applications.

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dc.contributor.advisorVeena Misra, Co-Chair
dc.contributor.advisorBongmook Lee, Co-Chair
dc.contributor.advisorSpyridon Pavlidis, Member
dc.contributor.advisorRamon Collazo, Member
dc.contributor.authorAshik, Emran Khan
dc.date.accepted2024-01-18
dc.date.accessioned2024-01-19T13:30:28Z
dc.date.available2024-01-19T13:30:28Z
dc.date.defense2023-12-18
dc.date.issued2023-12-18
dc.date.released2024-01-19
dc.date.reviewed2024-01-17
dc.date.submitted2024-01-07
dc.degree.disciplineElectrical Engineering
dc.degree.leveldissertation
dc.degree.nameDoctor of Philosophy
dc.descriptionNorth Carolina State University Theses Electrical and Computer Engineering.
dc.formatPh.D. North Carolina State University, 2024.
dc.identifier.otherdeg36365
dc.identifier.urihttps://www.lib.ncsu.edu/resolver/1840.20/41518
dc.titleThe Mobility and Gate Oxide Reliability Improvement of SiC CMOS for High Temperature Applications.
dcterms.extent1 online resource (xii, 170 pages) : illustrations

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