Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1-xGaxN multiple quantum wells

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dc.date.accessioned2008-02-28T22:33:16Z
dc.date.available2008-02-28T22:33:16Z
dc.date.issued1997
dc.format.extent74288 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationNardelli, M. B., Rapcewicz, K., & Bernholc, J. (1997). Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1-xGaxN multiple quantum wells. Applied physics letters, 71(21), 3135-3137.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/361
dc.language.isoen
dc.titlePolarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1-xGaxN multiple quantum wells
dc.typeArticle

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