Hydrogen free integration of high-k gate dielectrics

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dc.date.accessioned2008-10-14T13:56:49Z
dc.date.available2008-10-14T13:56:49Z
dc.date.issued2006
dc.format.extent112559 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationColombo, L., Chambers, J. J., & Visokay, M. R. (2006). Hydrogen free integration of high-k gate dielectrics. U.S. Patent No. 7,067,434. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1354
dc.language.isoen
dc.titleHydrogen free integration of high-k gate dielectrics
dc.typePatent

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