Design and Fabrication of 4H-SiC High Voltage Devices.

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dc.contributor.advisorAlex Huang, Co-Chairen_US
dc.contributor.advisorB. Baliga, Co-Chairen_US
dc.contributor.advisorSubhashish Bhattacharya, Memberen_US
dc.contributor.advisorVeena Misra, Memberen_US
dc.contributor.advisorAnant Agarwal, Memberen_US
dc.contributor.authorSung, Woongjeen_US
dc.date.accepted2012-04-13en_US
dc.date.accessioned2012-05-02T05:30:52Z
dc.date.available2012-05-02T05:30:52Z
dc.date.defense2011-12-09en_US
dc.date.issued2011-12-09en_US
dc.date.released2012-05-02en_US
dc.date.reviewed2011-12-12en_US
dc.date.submitted2011-12-09en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg1351en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/7755
dc.rightsen_US
dc.titleDesign and Fabrication of 4H-SiC High Voltage Devices.en_US

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