Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

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dc.date.accessioned2008-07-24T16:51:11Z
dc.date.available2008-07-24T16:51:11Z
dc.date.issued2007
dc.format.extent72779 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationZheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. U.S. Patent No. 7,195,993. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1056
dc.language.isoen
dc.titleMethods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
dc.typePatent

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