Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
| dc.date.accessioned | 2008-10-15T19:25:28Z | |
| dc.date.available | 2008-10-15T19:25:28Z | |
| dc.date.issued | 1987 | |
| dc.format.extent | 137428 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.citation | Bumble, B., Cuomo, J. J., Logan, J. S., & Rossnagel, S. M. (1987). Hollow cathode enhanced plasma for high rate reactive ion etching and deposition. U.S. Patent No. 4,637,853. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/1532 | |
| dc.language.iso | en | |
| dc.title | Hollow cathode enhanced plasma for high rate reactive ion etching and deposition | |
| dc.type | Patent |
